Formation of a vertical SnSe/SnSe2 p-n heterojunction by NH3 plasma-induced phase transformation

Yi Li; Juanmei Duan; Yonder Berencén; René Hübner; Hsu Sheng Tsai; Chia Nung Kuo; Chin Shan Lue; Manfred Helm; Shengqiang Zhou; Slawomir Prucnal

doi:10.1039/d2na00434h

Formation of a vertical SnSe/SnSe₂ p-n heterojunction by NH₃ plasma-induced phase transformation

Yi Li, Juanmei Duan, Yonder Berencén, René Hübner, Hsu Sheng Tsai, Chia Nung Kuo, Chin Shan Lue, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe₂). The p-n heterojunction is created in a single flake by the NH₃-plasma-assisted phase transformation from SnSe₂ to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH₃ flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe₂ flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe₂ heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.

Original language	English
Pages (from-to)	443-449
Number of pages	7
Journal	Nanoscale Advances
Volume	5
Issue number	2
DOIs	https://doi.org/10.1039/d2na00434h
Publication status	Published - 2022 Nov 25

All Science Journal Classification (ASJC) codes

Bioengineering
Atomic and Molecular Physics, and Optics
General Chemistry
General Materials Science
General Engineering

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10.1039/d2na00434h

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@article{068dd7020af744909de042aebdd09627,

title = "Formation of a vertical SnSe/SnSe2 p-n heterojunction by NH3 plasma-induced phase transformation",

abstract = "Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe2). The p-n heterojunction is created in a single flake by the NH3-plasma-assisted phase transformation from SnSe2 to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH3 flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe2 flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe2 heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.",

author = "Yi Li and Juanmei Duan and Yonder Berenc{\'e}n and Ren{\'e} H{\"u}bner and Tsai, {Hsu Sheng} and Kuo, {Chia Nung} and Lue, {Chin Shan} and Manfred Helm and Shengqiang Zhou and Slawomir Prucnal",

note = "Funding Information: The authors thank Annette Kunz for TEM specimen preparation. Furthermore, the nanofabrication facilities (NanoFaRo) at the HZDR Ion Beam Center, the use of the HZDR Ion Beam Center TEM facilities and the funding of TEM Talos by the German Federal Ministry of Education and Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP are gratefully acknowledged. This work was supported by the Ministry of Science and Technology of Taiwan under contract No. MOST-109-2112-M-006-013 and MOST-110-2124-M-006-010. Yi Li acknowledges the financial support by the Chinese Scholarship Council (File No. 202006890006). Publisher Copyright: {\textcopyright} 2023 RSC.",

year = "2022",

month = nov,

day = "25",

doi = "10.1039/d2na00434h",

language = "English",

volume = "5",

pages = "443--449",

journal = "Nanoscale Advances",

issn = "2516-0230",

publisher = "Royal Society of Chemistry",

number = "2",

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TY - JOUR

T1 - Formation of a vertical SnSe/SnSe2 p-n heterojunction by NH3 plasma-induced phase transformation

AU - Li, Yi

AU - Duan, Juanmei

AU - Berencén, Yonder

AU - Hübner, René

AU - Tsai, Hsu Sheng

AU - Kuo, Chia Nung

AU - Lue, Chin Shan

AU - Helm, Manfred

AU - Zhou, Shengqiang

AU - Prucnal, Slawomir

N1 - Funding Information: The authors thank Annette Kunz for TEM specimen preparation. Furthermore, the nanofabrication facilities (NanoFaRo) at the HZDR Ion Beam Center, the use of the HZDR Ion Beam Center TEM facilities and the funding of TEM Talos by the German Federal Ministry of Education and Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP are gratefully acknowledged. This work was supported by the Ministry of Science and Technology of Taiwan under contract No. MOST-109-2112-M-006-013 and MOST-110-2124-M-006-010. Yi Li acknowledges the financial support by the Chinese Scholarship Council (File No. 202006890006). Publisher Copyright: © 2023 RSC.

PY - 2022/11/25

Y1 - 2022/11/25

N2 - Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe2). The p-n heterojunction is created in a single flake by the NH3-plasma-assisted phase transformation from SnSe2 to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH3 flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe2 flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe2 heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.

AB - Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe2). The p-n heterojunction is created in a single flake by the NH3-plasma-assisted phase transformation from SnSe2 to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH3 flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe2 flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe2 heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.

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U2 - 10.1039/d2na00434h

DO - 10.1039/d2na00434h

M3 - Article

AN - SCOPUS:85144148725

SN - 2516-0230

VL - 5

SP - 443

EP - 449

JO - Nanoscale Advances

JF - Nanoscale Advances

IS - 2

ER -

Formation of a vertical SnSe/SnSe₂ p-n heterojunction by NH₃ plasma-induced phase transformation

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