Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact

Dung Ching Perng, Jhin Wei Chen, Chyi Jeng Wu

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Using Al added Mo back electrode to provide Al source to form CuInAlSe 2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalSolar Energy Materials and Solar Cells
Issue number1
Publication statusPublished - 2011 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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