Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact

Dung Ching Perng; Jhin Wei Chen; Chyi Jeng Wu

doi:10.1016/j.solmat.2010.04.046

Formation of CuInAlSe₂ film with double graded bandgap using Mo(Al) back contact

Dung Ching Perng, Jhin Wei Chen, Chyi Jeng Wu

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Using Al added Mo back electrode to provide Al source to form CuInAlSe ₂ (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.

Original language	English
Pages (from-to)	257-260
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	95
Issue number	1
DOIs	https://doi.org/10.1016/j.solmat.2010.04.046
Publication status	Published - 2011 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2010.04.046

Cite this

@article{464c3c52dcfd43f09c2e4627e0d83915,

title = "Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact",

abstract = "Using Al added Mo back electrode to provide Al source to form CuInAlSe 2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.",

author = "Perng, {Dung Ching} and Chen, {Jhin Wei} and Wu, {Chyi Jeng}",

year = "2011",

month = jan,

day = "1",

doi = "10.1016/j.solmat.2010.04.046",

language = "English",

volume = "95",

pages = "257--260",

journal = "Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact

AU - Perng, Dung Ching

AU - Chen, Jhin Wei

AU - Wu, Chyi Jeng

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Using Al added Mo back electrode to provide Al source to form CuInAlSe 2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.

AB - Using Al added Mo back electrode to provide Al source to form CuInAlSe 2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.

UR - http://www.scopus.com/inward/record.url?scp=78149360844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149360844&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2010.04.046

DO - 10.1016/j.solmat.2010.04.046

M3 - Article

AN - SCOPUS:78149360844

VL - 95

SP - 257

EP - 260

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

IS - 1

ER -