@article{021839b9a3b247b88b47c6d801637443,
title = "Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors",
abstract = "This study investigated the reliability of top-gate p-type organic thin-film transistors in vacuum under positive bias stress-induced and positive bias illumination stress-induced instability degradation. The manufacturing process suggested that sidewall dielectric insulating layers are thin. In addition, a shorter organic gate dielectric sidewall causes a larger electric field. Therefore, sidewall electron traps exhibit parasitic transistor characteristics, and the parasitic channel experiences premature conduction, triggering an abnormal hump phenomenon. The mechanism of degradation is verified through electric field simulation; this mechanism is generated owing to the bias stress of the gate. These observations indicate that organic thin-film transistors should be designed with a suitable sidewall insulation thickness to reduce the influence of the sidewall electric field.",
author = "Chen, {Hong Chih} and Tsao, {Yu Ching} and Chu, {An Kuo} and Huang, {Hui Chun} and Lai, {Wei Chih} and Chen, {Guan Fu} and Huang, {Shin Ping} and Chang, {Ting Chang} and Chen, {Po Hsun} and Chen, {Jian Jie} and Kuo, {Chuan Wei} and Zhou, {Kuan Ju} and Hung, {Yang Hao}",
note = "Funding Information: This work was supported in part by the National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung area and in part by the Ministry of Science and Technology of the Republic of Taiwan under Contract Most-106-2112-M-110-008-MY3 and Contract Most-107-2119-M-110-008. Funding Information: Manuscript received July 12, 2019; revised October 9, 2019 and October 20, 2019; accepted October 21, 2019. Date of publication October 23, 2019; date of current version November 27, 2019. This work was supported in part by the National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung area and in part by the Ministry of Science and Technology of the Republic of Taiwan under Contract Most-106-2112-M-110-008-MY3 and Contract Most-107-2119-M-110-008. The review of this letter was arranged by Editor W. S. Wong. (Hong-Chih Chen and Guan-Fu Chen contributed equally to this work.) (Corresponding authors: Ting-Chang Chang; Wei-Chih Lai.) H.-C. Chen and W.-C. Lai are with the Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan (e-mail:
[email protected]). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2019",
month = dec,
doi = "10.1109/LED.2019.2949243",
language = "English",
volume = "40",
pages = "1941--1944",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}