Cu3Ge/Pt/Au has been deposited onto the surface of p-ZnSe, n+-ZnSe and n-ZnSe. It was found that the observed Cu3Ge/p-ZnSe ohmic behaviour is due mainly to hole tunnelling through the metal/semiconductor interface. A p+-n junction-like I-V characteristic for Cu3Ge/n-ZnSe was also observed. Furthermore, a negative differential resistance with a peak-to-valley ratio of approximately 6 was observed under forward bias when Cu3Ge was deposited onto n+-ZnSe. These observations all suggest that Cu3Ge can form a local p+ region on the ZnSe surface.
|Number of pages||2|
|Publication status||Published - 1999 Dec 9|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering