Formation of local p+ region in ZnSe by Cu3Ge contact

S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H. Lan, A. C.H. Lin, H. Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Cu3Ge/Pt/Au has been deposited onto the surface of p-ZnSe, n+-ZnSe and n-ZnSe. It was found that the observed Cu3Ge/p-ZnSe ohmic behaviour is due mainly to hole tunnelling through the metal/semiconductor interface. A p+-n junction-like I-V characteristic for Cu3Ge/n-ZnSe was also observed. Furthermore, a negative differential resistance with a peak-to-valley ratio of approximately 6 was observed under forward bias when Cu3Ge was deposited onto n+-ZnSe. These observations all suggest that Cu3Ge can form a local p+ region on the ZnSe surface.

Original languageEnglish
Pages (from-to)2231-2232
Number of pages2
JournalElectronics Letters
Issue number25
Publication statusPublished - 1999 Dec 9

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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