Formation of microcrystalline silicon films using rapid crystal aluminum induced crystallization under low-temperature rapid thermal annealing

Cheng Chang Peng, Chen Kuei Chung, Jen Fin Lin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The process of obtaining thin film solar cells using the method of aluminum-induced crystallization under rapid thermal annealing (RTA) was investigated. 200-nm-thick amorphous Si (a-Si) film was deposited on a glass substrate using an ultra-high vacuum ion beam sputtering system. A 50-nm-thick crystal aluminum layer was then evaporated and deposited onto the a-Si film. In contrast to conventional furnace annealing, RTA can supply rapid thermal energy so that a-Si can be induced into microcrystalline-Si (μc-Si) in a short time at low temperatures. The crystal Al may promote the crystallization reaction because its surface energy is higher than 0.89 N/m, which is the minimum energy required to produce the (111) orientation. Free Si atoms are induced at the interface of the Al and Si sub-layers by the diffusion of Al along the grain boundaries. The Raman spectrum shows that the sample could be induced to crystallize at 350 °C. After the aluminum was etched, the maximum grain size was 4 μm. The carrier mobility AR was between 6.2 cm2/Vs and 18.8 cm2/Vs. The proposed method can be used to obtain μc-Si with reduced energy and time during the thermal annealing.

Original languageEnglish
Pages (from-to)6966-6971
Number of pages6
JournalThin Solid Films
Volume518
Issue number23
DOIs
Publication statusPublished - 2010 Sep 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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