Formation of nanometer-scale InAs islands on silicon

P. C. Sharma; K. W. Alt; D. Y. Yeh; D. Wang; K. L. Wang

doi:10.1007/s11664-999-0091-1

Formation of nanometer-scale InAs islands on silicon

P. C. Sharma, K. W. Alt, D. Y. Yeh, D. Wang, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Three dimensional islands of InAs have been grown on Si (100) by using molecular-beam epitaxy to obtain nanometer-scale quantum dots. Morphological examination by atomic force microscopy revealed the formation of islands with narrow size distributions and high densities. For an approximate coverage of 1.2 monolayers of InAs beyond the growth mode transition, our observations of a rapid evolution of island morphology are explained in terms of strain relaxing mechanisms in the early stages of InAs/Si heteroepitaxy.

Original language	English
Pages (from-to)	432-436
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	5
DOIs	https://doi.org/10.1007/s11664-999-0091-1
Publication status	Published - 1999 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0091-1

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abstract = "Three dimensional islands of InAs have been grown on Si (100) by using molecular-beam epitaxy to obtain nanometer-scale quantum dots. Morphological examination by atomic force microscopy revealed the formation of islands with narrow size distributions and high densities. For an approximate coverage of 1.2 monolayers of InAs beyond the growth mode transition, our observations of a rapid evolution of island morphology are explained in terms of strain relaxing mechanisms in the early stages of InAs/Si heteroepitaxy.",

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AU - Sharma, P. C.

AU - Alt, K. W.

AU - Yeh, D. Y.

AU - Wang, D.

AU - Wang, K. L.

PY - 1999/5

Y1 - 1999/5

N2 - Three dimensional islands of InAs have been grown on Si (100) by using molecular-beam epitaxy to obtain nanometer-scale quantum dots. Morphological examination by atomic force microscopy revealed the formation of islands with narrow size distributions and high densities. For an approximate coverage of 1.2 monolayers of InAs beyond the growth mode transition, our observations of a rapid evolution of island morphology are explained in terms of strain relaxing mechanisms in the early stages of InAs/Si heteroepitaxy.

AB - Three dimensional islands of InAs have been grown on Si (100) by using molecular-beam epitaxy to obtain nanometer-scale quantum dots. Morphological examination by atomic force microscopy revealed the formation of islands with narrow size distributions and high densities. For an approximate coverage of 1.2 monolayers of InAs beyond the growth mode transition, our observations of a rapid evolution of island morphology are explained in terms of strain relaxing mechanisms in the early stages of InAs/Si heteroepitaxy.

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JF - Journal of Electronic Materials

IS - 5

ER -

Formation of nanometer-scale InAs islands on silicon

Abstract

All Science Journal Classification (ASJC) codes

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