Formation of selective high barrier region by inductively coupled plasma treatment on GaN-based light-emitting diodes

Ting Wei Kuo, Shi Xiong Lin, Pin Kun Hung, Kwok Keung Chong, Chen I. Hung, Mau Phon Houng

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

By inductively coupled plasma (ICP) etching, a selective high barrier region (SHBR) was fabricated below the p-pad metal electrode for modifying the injection current distribution on p-type GaN of GaN-based light-emitting diodes (LEDs). Through the analysis of current noise power spectra, the samples with ICP etching treatment have excess nitrogen vacancies at the selectively etched surface of p-type GaN; thus, they have a lower hole concentration than the as-grown sample, resulting in a larger barrier height for carrier transport. With this SHBR, the light-output power for the LED chip measured at 20mA was significantly increased by 12% as compared with that for the conventional LED chip. The light-output power increase could be attributed to a relative reduction in optical power absorption under the p-pad electrode and a higher density of current effectively injected into the active layer of the LED by the SHBR structure.

Original languageEnglish
Article number116504
JournalJapanese journal of applied physics
Volume49
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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