Formation of SiC nanoparticles of two-layer C/Si films on the Si substrate using thermal annealing

Chen-Kuei Chung, C. W. Lai, C. C. Peng, B. H. Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ion beam sputtering system under ultra high vacuum was used to deposit two-layer C/a-Si thin films on the Si(100) substrates at room temperature (RT). Carbon (C) layer thickness was fixed at 100 nm and amorphous silicon (a-Si) was varied at 5 nm and 50 nm. Rapid thermal annealing was performed to investigate the formation of SiC nanoparticles (np-SiCs) at 750-900 °C for 0.5 min. Field emission scanning electron microscope (FESEM), Raman spectroscopy and X-ray diffraction were used for the characterization of nanoparticle formation, evolution of bonding between Si and C reaction and phase formation, respectively. No particle appears on the surface of two-layer C/a-Si films deposited at RT and post annealed at 750 °C. Many np-SiCs were formed at 900 °C on the surface of films with thin underlying a-Si of 5 nm but not in the two-layer film with thick a-Si of 50 nm. The sample with thinner a-Si film on bulk Si(100) has lower activation energy for the diffusion of Si atoms in the film and bulk to react with C to form np-SiC at 900 °C compared to the sample with thicker a-Si film. A mechanism of np-SiCs formation on the surface of two-layer C/a-Si films using thermal annealing was proposed and discussed.

Original languageEnglish
Pages (from-to)1219-1224
Number of pages6
JournalThin Solid Films
Volume517
Issue number3
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Amorphous silicon
amorphous silicon
Annealing
Nanoparticles
nanoparticles
annealing
Substrates
silicon films
Hot Temperature
Rapid thermal annealing
Ultrahigh vacuum
room temperature
Field emission
Ion beams
ultrahigh vacuum
Sputtering
Raman spectroscopy
field emission
Electron microscopes
Carbon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Chung, Chen-Kuei ; Lai, C. W. ; Peng, C. C. ; Wu, B. H. / Formation of SiC nanoparticles of two-layer C/Si films on the Si substrate using thermal annealing. In: Thin Solid Films. 2008 ; Vol. 517, No. 3. pp. 1219-1224.
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Formation of SiC nanoparticles of two-layer C/Si films on the Si substrate using thermal annealing. / Chung, Chen-Kuei; Lai, C. W.; Peng, C. C.; Wu, B. H.

In: Thin Solid Films, Vol. 517, No. 3, 01.12.2008, p. 1219-1224.

Research output: Contribution to journalArticle

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