Formation of sp3-bonded carbon upon hydrothermal treatment of SiC

Yury G. Gogotsi, Per Kofstad, Masahiro Yoshimura, Klaus G. Nickel

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


The composition and structure of carbon produced by selective leaching of silicon carbide under hydrothermal conditions in the temperature range 300-800°C and at pressures <500 MPa were examined by Raman and IR spectroscopy, XRD, SEM, TEM and EDS. The results of this study have demonstrated that various carbon allotropes, including diamond, are formed during hydrothermal treatment of SiC. Their structure varies depending on the experimental conditions and SiC precursor. The formation of sp2 vs. sp3 carbon is discussed.

Original languageEnglish
Pages (from-to)151-162
Number of pages12
JournalDiamond and Related Materials
Issue number2
Publication statusPublished - 1996 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Formation of sp<sup>3</sup>-bonded carbon upon hydrothermal treatment of SiC'. Together they form a unique fingerprint.

Cite this