Formation of well-aligned ZnGa2O4 nanowires from Ga2O3/ZnO core-shell nanowires via a Ga2O 3/ZnGa2O4 epitaxial relationship

Ko Wei Chang, Jih-Jen Wu

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61 Citations (Scopus)


Formation of well-aligned and single-crystalline ZnGa2O 4 nanowires on sapphire (0001) substrates has been achieved via annealing of the Ga2O3/ZnO core-shell nanowires, Ga 2O3/ZnO core-shell nanowires were prepared using a two-step method. The thickness of the original ZnO shell and the thermal budget of the annealing process play crucial roles for preparing single-crystalline ZnGa2O4 nanowires. Structural analyses of the annealed nanowires reveal the existence of an epitaxial relationship between ZnGa 2O4 and Ga2O3 phases during the solid-state reaction. A strong CL emission band centered at 360 nm and a small tail at 680 nm are obtained at room temperature from the single-crystalline ZnGa2O4 nanowires.

Original languageEnglish
Pages (from-to)13572-13577
Number of pages6
JournalJournal of Physical Chemistry B
Issue number28
Publication statusPublished - 2005 Jul 21

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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