Forming local semi-insulating regions on silicon wafers by proton bombardment

Chungpin Liao, Tzuen Hsi Huang, Chwan Ying Lee, Duan lee Tang

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)

Abstract

A low-cost method that creates local semi-insulating regions in a typically silicon wafers having substrate resistivity of around 10 Ohm-cm is presented. It is demonstrated that the local semi-insulating substrate can be formed by Mev protons bombardment of silicon wafers. The Mega-ohm-cm resistivity substrate is ideal for FG applications and mixed mode IC applications.

Original languageEnglish
Pages80-81
Number of pages2
Publication statusPublished - 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: 1998 Jun 221998 Jun 24

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period98-06-2298-06-24

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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