A new multiphysics finite-difference time-domain (FDTD) model of the lasing dynamics of a semiconductor was reported. The model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. This approach presents an advance relative to the method described which did not include the pumping dynamics, the semiconductor band structure, or the exclusion principle. The technique allows to solve for the full dynamics of lasing action in semiconductor media.
|Number of pages||4|
|Journal||IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)|
|Publication status||Published - 2003 Sep 1|
|Event||2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States|
Duration: 2003 Jun 22 → 2003 Jun 27
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering