Four-level two-electron FDTD model of lasing action in a semiconductor

Shih Hui Chang, Hui Cao, Allen Taflove

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A new multiphysics finite-difference time-domain (FDTD) model of the lasing dynamics of a semiconductor was reported. The model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. This approach presents an advance relative to the method described which did not include the pumping dynamics, the semiconductor band structure, or the exclusion principle. The technique allows to solve for the full dynamics of lasing action in semiconductor media.

Original languageEnglish
Pages (from-to)382-385
Number of pages4
JournalIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Volume4
Publication statusPublished - 2003 Sep 1
Event2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
Duration: 2003 Jun 222003 Jun 27

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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