Abstract
We report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 approx. 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.
| Original language | English |
|---|---|
| Pages (from-to) | 199-204 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 484 |
| DOIs | |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: 1997 Nov 30 → 1997 Dec 4 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering