Free-standing single-crystalline chemically vapor deposited diamond films

Y. Tzeng; J. Wei; J. T. Woo; W. Lanford

doi:10.1063/1.110531

Free-standing single-crystalline chemically vapor deposited diamond films

Y. Tzeng, J. Wei, J. T. Woo, W. Lanford

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Free-standing chemically vapor deposited (CVD) single-crystalline diamond films have been fabricated by a sequence of processes including high energy ion implantation, microwave plasma enhanced chemical vapor deposition, and the final separation of the diamond epilayer from the substrate by heating in oxygen. The homoepitaxial diamond film separated from the substrate is about 15 μm thick. It is flat and transparent, and exhibits a sharp diamond Raman peak without nondiamond background signals. This process is promising for mass production of large-area single-crystalline diamonds with the size restricted only by the availability of one large initial diamond substrate. The initial substrate is expensive but can be used repetitively to produce a large number of single-crystalline CVD diamond films.

Original language	English
Pages (from-to)	2216-2218
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	16
DOIs	https://doi.org/10.1063/1.110531
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110531

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abstract = "Free-standing chemically vapor deposited (CVD) single-crystalline diamond films have been fabricated by a sequence of processes including high energy ion implantation, microwave plasma enhanced chemical vapor deposition, and the final separation of the diamond epilayer from the substrate by heating in oxygen. The homoepitaxial diamond film separated from the substrate is about 15 μm thick. It is flat and transparent, and exhibits a sharp diamond Raman peak without nondiamond background signals. This process is promising for mass production of large-area single-crystalline diamonds with the size restricted only by the availability of one large initial diamond substrate. The initial substrate is expensive but can be used repetitively to produce a large number of single-crystalline CVD diamond films.",

author = "Y. Tzeng and J. Wei and Woo, {J. T.} and W. Lanford",

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AB - Free-standing chemically vapor deposited (CVD) single-crystalline diamond films have been fabricated by a sequence of processes including high energy ion implantation, microwave plasma enhanced chemical vapor deposition, and the final separation of the diamond epilayer from the substrate by heating in oxygen. The homoepitaxial diamond film separated from the substrate is about 15 μm thick. It is flat and transparent, and exhibits a sharp diamond Raman peak without nondiamond background signals. This process is promising for mass production of large-area single-crystalline diamonds with the size restricted only by the availability of one large initial diamond substrate. The initial substrate is expensive but can be used repetitively to produce a large number of single-crystalline CVD diamond films.

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Free-standing single-crystalline chemically vapor deposited diamond films

Abstract

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