Frequency and noise performances of photoelectrochemically etched and oxidized gate-recessed AlGaN/GaN MOS-HEMTs

Ya Lan Chiou, Chi Sen Lee, Ching Ting Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The gate-recessed AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) were fabricated using the combination technology of the photoelectrochemical (PEC) wet etching method and the PEC oxidation method. The gate-recessed structure on the AlGaN layer was first carried out using the PEC wet etching method followed by the direct growth of the gate oxide layer on the recessed surface using the PEC oxidation method. According to the measured pulsed output characteristics, the low frequency noise results and the Hooge's coefficient, the performances of the gate-recessed MOS-HEMTs are better than those of the planar gate MOS-HEMTs. The improved performances of the gate-recessed MOS-HEMTs are attributed to the removal of original damages and native defects using the PEC etching process and the passivation function using the PEC oxidation process.

Original languageEnglish
Pages (from-to)H477-H481
JournalJournal of the Electrochemical Society
Volume158
Issue number5
DOIs
Publication statusPublished - 2011 Apr 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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