TY - JOUR
T1 - Frequency response of microwave dielectric Bi2(Zn1/3Nb2/3)2O7 thin films laser deposited on indium-tin oxide coated glass
AU - Cheng, Hsiu Fung
AU - Chen, Yi Chun
AU - Lin, I. Nan
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Bi2(Zn1/3Nb2/3)2O7 (BZN) thin films were prepared by using a pulsed laser deposition technique. For films in situ deposited on indium-tin oxide (ITO) coated glass substrates, the crystalline phase can be obtained by growing at a substrate temperature (7s) higher than 475 °C. Too low a substrate temperature (rs<400 °C) results in the amorphous phase, whereas too high a temperature (Ts >600 °C) leads to substantial interaction between the BZN film and the ITO layer. For the films deposited at a 500 °C substrate temperature, the texture characteristics change with their thickness. The films are (222) preferentially oriented when they are thin, and (400) preferentially oriented when they are thick. The optical properties, measured using optical spectroscopy, reveal that the index of refraction (n) and absorption coefficient (κ) vary between n = 2.08-2.51 and κ = 1.22 × 10-5-1.88×10-4nm-1, respectively. These optical parameters do not change significantly with the preferred orientation and thickness of the films. However, the low frequency dielectric properties are closely correlated with the material's characteristics. The crystalline BZN films have a markedly larger dielectric constant than the amorphous films.
AB - Bi2(Zn1/3Nb2/3)2O7 (BZN) thin films were prepared by using a pulsed laser deposition technique. For films in situ deposited on indium-tin oxide (ITO) coated glass substrates, the crystalline phase can be obtained by growing at a substrate temperature (7s) higher than 475 °C. Too low a substrate temperature (rs<400 °C) results in the amorphous phase, whereas too high a temperature (Ts >600 °C) leads to substantial interaction between the BZN film and the ITO layer. For the films deposited at a 500 °C substrate temperature, the texture characteristics change with their thickness. The films are (222) preferentially oriented when they are thin, and (400) preferentially oriented when they are thick. The optical properties, measured using optical spectroscopy, reveal that the index of refraction (n) and absorption coefficient (κ) vary between n = 2.08-2.51 and κ = 1.22 × 10-5-1.88×10-4nm-1, respectively. These optical parameters do not change significantly with the preferred orientation and thickness of the films. However, the low frequency dielectric properties are closely correlated with the material's characteristics. The crystalline BZN films have a markedly larger dielectric constant than the amorphous films.
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U2 - 10.1063/1.371887
DO - 10.1063/1.371887
M3 - Article
AN - SCOPUS:0000874529
SN - 0021-8979
VL - 87
SP - 479
EP - 483
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 1
ER -