Full-field wafer level thin film stress measurement by phase-stepping shadow Moiré

Kuo-Shen Chen, Terry Yuan-Fang Chen, Chia Cheng Chuang, I. Kuan Lin

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

A wafer topography measurement system has been designed and demonstrated based on shadow Moiré. Three-step phase-stepping and phase unwarping techniques are also incorporated to enhance the system resolution. Wafer curvatures or bows can be achieved by analyzing the Moiré fringe patterns and film stress can be obtained subsequently by transforming this wafer curvature using a conversion equation such as Stoney's formula. Wafer bow of plasma enhanced chemical vapor deposition nitride and oxide coated wafers are measured by this shadow Moiré system and are subsequently verified by the KLA-Tencor FLX 2320 system. The discrepancy between both bow measurements is within 2 μm, regardless of the magnitude of the measurement. Therefore, this system is especially suitable for stress characterization of thicker, stiffer, or highly stressed films. In comparison with the traditional laser scanning method, wafer curvature obtained by shadow Moiré is based on full-field information and it would have a better accuracy. By integrating this system with a more accurate wafer curvature to film stress conversion formula, this system should also provide a better film stress characterization.

Original languageEnglish
Pages (from-to)594-601
Number of pages8
JournalIEEE Transactions on Components and Packaging Technologies
Volume27
Issue number3
DOIs
Publication statusPublished - 2004 Sep 1

Fingerprint

Stress measurement
Thin films
Plasma enhanced chemical vapor deposition
Nitrides
Oxides
Topography
Scanning
Lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{98f44ea967c54904a38e7f8fe99063f6,
title = "Full-field wafer level thin film stress measurement by phase-stepping shadow Moir{\'e}",
abstract = "A wafer topography measurement system has been designed and demonstrated based on shadow Moir{\'e}. Three-step phase-stepping and phase unwarping techniques are also incorporated to enhance the system resolution. Wafer curvatures or bows can be achieved by analyzing the Moir{\'e} fringe patterns and film stress can be obtained subsequently by transforming this wafer curvature using a conversion equation such as Stoney's formula. Wafer bow of plasma enhanced chemical vapor deposition nitride and oxide coated wafers are measured by this shadow Moir{\'e} system and are subsequently verified by the KLA-Tencor FLX 2320 system. The discrepancy between both bow measurements is within 2 μm, regardless of the magnitude of the measurement. Therefore, this system is especially suitable for stress characterization of thicker, stiffer, or highly stressed films. In comparison with the traditional laser scanning method, wafer curvature obtained by shadow Moir{\'e} is based on full-field information and it would have a better accuracy. By integrating this system with a more accurate wafer curvature to film stress conversion formula, this system should also provide a better film stress characterization.",
author = "Kuo-Shen Chen and Chen, {Terry Yuan-Fang} and Chuang, {Chia Cheng} and Lin, {I. Kuan}",
year = "2004",
month = "9",
day = "1",
doi = "10.1109/TCAPT.2004.831830",
language = "English",
volume = "27",
pages = "594--601",
journal = "IEEE Transactions on Components and Packaging Technologies",
issn = "1521-3331",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

Full-field wafer level thin film stress measurement by phase-stepping shadow Moiré. / Chen, Kuo-Shen; Chen, Terry Yuan-Fang; Chuang, Chia Cheng; Lin, I. Kuan.

In: IEEE Transactions on Components and Packaging Technologies, Vol. 27, No. 3, 01.09.2004, p. 594-601.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Full-field wafer level thin film stress measurement by phase-stepping shadow Moiré

AU - Chen, Kuo-Shen

AU - Chen, Terry Yuan-Fang

AU - Chuang, Chia Cheng

AU - Lin, I. Kuan

PY - 2004/9/1

Y1 - 2004/9/1

N2 - A wafer topography measurement system has been designed and demonstrated based on shadow Moiré. Three-step phase-stepping and phase unwarping techniques are also incorporated to enhance the system resolution. Wafer curvatures or bows can be achieved by analyzing the Moiré fringe patterns and film stress can be obtained subsequently by transforming this wafer curvature using a conversion equation such as Stoney's formula. Wafer bow of plasma enhanced chemical vapor deposition nitride and oxide coated wafers are measured by this shadow Moiré system and are subsequently verified by the KLA-Tencor FLX 2320 system. The discrepancy between both bow measurements is within 2 μm, regardless of the magnitude of the measurement. Therefore, this system is especially suitable for stress characterization of thicker, stiffer, or highly stressed films. In comparison with the traditional laser scanning method, wafer curvature obtained by shadow Moiré is based on full-field information and it would have a better accuracy. By integrating this system with a more accurate wafer curvature to film stress conversion formula, this system should also provide a better film stress characterization.

AB - A wafer topography measurement system has been designed and demonstrated based on shadow Moiré. Three-step phase-stepping and phase unwarping techniques are also incorporated to enhance the system resolution. Wafer curvatures or bows can be achieved by analyzing the Moiré fringe patterns and film stress can be obtained subsequently by transforming this wafer curvature using a conversion equation such as Stoney's formula. Wafer bow of plasma enhanced chemical vapor deposition nitride and oxide coated wafers are measured by this shadow Moiré system and are subsequently verified by the KLA-Tencor FLX 2320 system. The discrepancy between both bow measurements is within 2 μm, regardless of the magnitude of the measurement. Therefore, this system is especially suitable for stress characterization of thicker, stiffer, or highly stressed films. In comparison with the traditional laser scanning method, wafer curvature obtained by shadow Moiré is based on full-field information and it would have a better accuracy. By integrating this system with a more accurate wafer curvature to film stress conversion formula, this system should also provide a better film stress characterization.

UR - http://www.scopus.com/inward/record.url?scp=4444370127&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444370127&partnerID=8YFLogxK

U2 - 10.1109/TCAPT.2004.831830

DO - 10.1109/TCAPT.2004.831830

M3 - Article

VL - 27

SP - 594

EP - 601

JO - IEEE Transactions on Components and Packaging Technologies

JF - IEEE Transactions on Components and Packaging Technologies

SN - 1521-3331

IS - 3

ER -