Abstract
Low-Dropout voltage regulators (LDOs) have been widely used in the mobile electronic devices. Due to the purpose of energy saving, LDOs are preferred to perform fast transient response with low quiescent current as they operate at low supply voltage condition. This paper proposes a full quiescent current boosting circuit (FQCB) that is augmented to the LDO for further accelerating the response during the load transient. Compared to the other dynamic bias approach, the proposed technique raises the quiescent current to the maximum quantity during the load transient for maximizing the dynamic bias effect. The designed LDO was implemented by a 0.35μm CMOS process. Testing results show that the voltage spike is reduced by 65% compared with the LDO without the proposed circuit under the 50mA load change within 300ns. The recovery time is less than 1μs and the stability is guaranteed.
| Original language | English |
|---|---|
| Title of host publication | ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems |
| Pages | 2733-2736 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of Duration: 2012 May 20 → 2012 May 23 |
Other
| Other | 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 |
|---|---|
| Country | Korea, Republic of |
| City | Seoul |
| Period | 12-05-20 → 12-05-23 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
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Full quiescent current enhancement technique for improving transient response on the output-capacitorless Low-Dropout regulator. / Wu, Chun Hsun; Chang-Chien, Le-Ren.
ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems. 2012. p. 2733-2736 6271874.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Full quiescent current enhancement technique for improving transient response on the output-capacitorless Low-Dropout regulator
AU - Wu, Chun Hsun
AU - Chang-Chien, Le-Ren
PY - 2012
Y1 - 2012
N2 - Low-Dropout voltage regulators (LDOs) have been widely used in the mobile electronic devices. Due to the purpose of energy saving, LDOs are preferred to perform fast transient response with low quiescent current as they operate at low supply voltage condition. This paper proposes a full quiescent current boosting circuit (FQCB) that is augmented to the LDO for further accelerating the response during the load transient. Compared to the other dynamic bias approach, the proposed technique raises the quiescent current to the maximum quantity during the load transient for maximizing the dynamic bias effect. The designed LDO was implemented by a 0.35μm CMOS process. Testing results show that the voltage spike is reduced by 65% compared with the LDO without the proposed circuit under the 50mA load change within 300ns. The recovery time is less than 1μs and the stability is guaranteed.
AB - Low-Dropout voltage regulators (LDOs) have been widely used in the mobile electronic devices. Due to the purpose of energy saving, LDOs are preferred to perform fast transient response with low quiescent current as they operate at low supply voltage condition. This paper proposes a full quiescent current boosting circuit (FQCB) that is augmented to the LDO for further accelerating the response during the load transient. Compared to the other dynamic bias approach, the proposed technique raises the quiescent current to the maximum quantity during the load transient for maximizing the dynamic bias effect. The designed LDO was implemented by a 0.35μm CMOS process. Testing results show that the voltage spike is reduced by 65% compared with the LDO without the proposed circuit under the 50mA load change within 300ns. The recovery time is less than 1μs and the stability is guaranteed.
UR - http://www.scopus.com/inward/record.url?scp=84866625659&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866625659&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2012.6271874
DO - 10.1109/ISCAS.2012.6271874
M3 - Conference contribution
AN - SCOPUS:84866625659
SP - 2733
EP - 2736
BT - ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
ER -