Full spectrum dielectric response of Bi2(Zn1/3Nb2/3)O7 thin films in terahertz, infrared and optical frequency regions

Hsiu Fung Cheng, Yi Chun Chen, Hsiang Lin Liu, Luu Gen Hwa, Petr Kužel, Jan Petzelt, I. Nan Lin

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Dielectric response of Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films was characterized by terahertz (THz), Fourier transform infrared (FTIR) and optical spectroscopies. FTIR measurements reveal the presence of lattice vibrational modes at f1 = 330 cm-1 and f2 = 526 cm-1. Real part of dielectric constant (ε1 ≅ 21.5 at f = 200 cm-1) for the BiZN thin films increases moderately with frequency and drops abruptly at the polarizational resonances corresponding to f1 and f2, approaching a low constant value (ε1 ≅ 2.4-3.6) in high frequency regime (f > 700 cm-1) High frequency response of BiZN thin films is essentially the same as the dielectric properties measured in optical frequency regime, indicating that there is no lattice vibrational mode beyond 700 cm-1. The dielectric properties of the films in f > 700 cm-1 regime is presumably contributed by electronic polarization only. In contrast, the low frequency dielectric constant (ε1 = 21.5) is still smaller than the 1-value measured by THz-spectroscopic technique (1)THz = 30-38. Such phenomenon infers that there exists additional lattice vibrational mode in between 0.8 and 6 THz (200 cm-1) frequency regime.

Original languageEnglish
Pages (from-to)161-163
Number of pages3
JournalMaterials Chemistry and Physics
Issue number2-3
Publication statusPublished - 2003 Apr 10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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