Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

Ying Yuan Huang, Young Woo Ok, Keeya Madani, Wookjin Choi, Ajay D. Upadhyaya, Vijaykumar D. Upadhyaya, Ajeet Rohatgi

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

We report on the fabrication of fully screen-printed bifacial large area (239 cm2) high-efficiency n-type Si solar cells with ion-implanted homogeneous boron emitter on the front side and carrier-selective tunnel oxide passivated contact (TOPCon) on the rear. Our phosphorus-doped poly-Si/SiOx passivated contact with SiNx capping layer gave excellent surface passivation with a very low recombination current density (J0_TOPCon) of ~1 fA/cm2 after a simulated firing treatment at ~770 °C without metallization. After screen-printed and fire-through metallization on n-TOPCon with ~13% metal coverage, metallized J0_TOPCon value increased to only ~5 fA/cm2. In addition, homogenous boron implanted emitter (~180 Ω/) passivated with ALD Al2O3 layer capped with PECVD SiNx/SiOx double-layer antireflection (DLAR) coating gave excellent passivation with emitter recombination current density of ~12 fA/cm2 prior to metallization. The industrial screen-printed, fire-through contacts with floating busbars on this boron emitter gave metallized emitter recombination current density of ~31 fA/cm2. This resulted in a low-cost industrial screen-printed n-type bifacial Si solar cell with 22.6% efficiency and 702 mV open-circuit voltage (Voc).

Original languageEnglish
Article number110585
JournalSolar Energy Materials and Solar Cells
Volume214
DOIs
Publication statusPublished - 2020 Aug 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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