Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor

Ching Sung Lee, Wei Chou Hsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Functional characteristics, comprising enhance-mode linear amplification performance and N-shaped negative-differential resistance phenomenon, have been observed in an inverted δ -doped In0.34 Al0.66 As0.85 Sb0.15 In0.75 Ga0. 25 AsInP high electron mobility transistor with the asymmetric source/drain terminal structure. Unpassivated peak performances, including the transconductance of 268 mSmm and saturation drain current density of 210 mAmm, and significant negative differential resistance characteristics, including the peak-to-valley current ratio of 6.1, can be obtained on the same device by switching the source/drain electrical connection. The electric field aspects of the asymmetry in the contacts have also been investigated.

Original languageEnglish
Article number033505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
Publication statusPublished - 2005 Jan 17

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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