Functional characteristics, comprising enhance-mode linear amplification performance and N-shaped negative-differential resistance phenomenon, have been observed in an inverted δ -doped In0.34 Al0.66 As0.85 Sb0.15 In0.75 Ga0. 25 AsInP high electron mobility transistor with the asymmetric source/drain terminal structure. Unpassivated peak performances, including the transconductance of 268 mSmm and saturation drain current density of 210 mAmm, and significant negative differential resistance characteristics, including the peak-to-valley current ratio of 6.1, can be obtained on the same device by switching the source/drain electrical connection. The electric field aspects of the asymmetry in the contacts have also been investigated.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)