Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method

Wen-Kuei Chuang, Zhen Liang Liao, Huai Tzu Chiang, Noritaka Usami

Research output: Contribution to journalArticle

Abstract

We report a detailed procedure of using the anodic oxidation to passivate the SiGe film surface in order to enhance the functionality Si/SiGe heterojunction infrared metal-semiconductor-metal (MSM) photodetectors. Specifically, we seek to reduce the magnitude of the dark current while simultaneously boosting the photocurrent to dark current contrast ratio of MSM devices. Our study demonstrated that the current ratio was boosted by more than tenfold compared to that of the device capped with photo-chemical vapor deposited oxide. In addition, a sizable reduction in dark current (more than 3 to 5 orders of magnitude) was achieved for samples prepared at lower current densities compared to that of a sample without being treated with anodic oxidation.

Original languageEnglish
Pages (from-to)2927-2931
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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