Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method

Yi Hsing Liu; Sheng Joue Young; Liang Wen Ji; Shoou Jinn Chang

doi:10.1109/TED.2015.2457441

Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method

Yi Hsing Liu, Sheng Joue Young, Liang Wen Ji, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The fabrication of Ga-doped zinc oxide (GZO) nanosheets on a glass substrate was done using the aqueous solution method. A GZO nanosheet metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 1.28 μm and ∼ 19nm, respectively. The energy dispersive X-ray spectrum determined that the Ga-doped sample contains ∼ 1.35 % at.%. The UV-to-visible rejection ratio of the sample is ∼ 36.1 when biased at 1 V, and the fabricated UV PD is visible-blind with a sharp cutoff at 370 nm. The photocurrent and dark-current constant ratio of the fabricated PD was ∼ 14 193 when biased at 1 V. The transient time constants measured during the rise time and the fall time were 2.45 and 4 s, respectively.

Original language	English
Article number	7173013
Pages (from-to)	2924-2927
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	9
DOIs	https://doi.org/10.1109/TED.2015.2457441
Publication status	Published - 2015 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2015.2457441

Cite this

@article{e8622f4e3e154f4ba640296167ec27fa,

title = "Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method",

abstract = "The fabrication of Ga-doped zinc oxide (GZO) nanosheets on a glass substrate was done using the aqueous solution method. A GZO nanosheet metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 1.28 μm and ∼ 19nm, respectively. The energy dispersive X-ray spectrum determined that the Ga-doped sample contains ∼ 1.35 % at.%. The UV-to-visible rejection ratio of the sample is ∼ 36.1 when biased at 1 V, and the fabricated UV PD is visible-blind with a sharp cutoff at 370 nm. The photocurrent and dark-current constant ratio of the fabricated PD was ∼ 14 193 when biased at 1 V. The transient time constants measured during the rise time and the fall time were 2.45 and 4 s, respectively.",

author = "Liu, {Yi Hsing} and Young, {Sheng Joue} and Ji, {Liang Wen} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2015",

month = sep,

day = "1",

doi = "10.1109/TED.2015.2457441",

language = "English",

volume = "62",

pages = "2924--2927",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method

AU - Liu, Yi Hsing

AU - Young, Sheng Joue

AU - Ji, Liang Wen

AU - Chang, Shoou Jinn

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The fabrication of Ga-doped zinc oxide (GZO) nanosheets on a glass substrate was done using the aqueous solution method. A GZO nanosheet metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 1.28 μm and ∼ 19nm, respectively. The energy dispersive X-ray spectrum determined that the Ga-doped sample contains ∼ 1.35 % at.%. The UV-to-visible rejection ratio of the sample is ∼ 36.1 when biased at 1 V, and the fabricated UV PD is visible-blind with a sharp cutoff at 370 nm. The photocurrent and dark-current constant ratio of the fabricated PD was ∼ 14 193 when biased at 1 V. The transient time constants measured during the rise time and the fall time were 2.45 and 4 s, respectively.

AB - The fabrication of Ga-doped zinc oxide (GZO) nanosheets on a glass substrate was done using the aqueous solution method. A GZO nanosheet metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 1.28 μm and ∼ 19nm, respectively. The energy dispersive X-ray spectrum determined that the Ga-doped sample contains ∼ 1.35 % at.%. The UV-to-visible rejection ratio of the sample is ∼ 36.1 when biased at 1 V, and the fabricated UV PD is visible-blind with a sharp cutoff at 370 nm. The photocurrent and dark-current constant ratio of the fabricated PD was ∼ 14 193 when biased at 1 V. The transient time constants measured during the rise time and the fall time were 2.45 and 4 s, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85027953441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027953441&partnerID=8YFLogxK

U2 - 10.1109/TED.2015.2457441

DO - 10.1109/TED.2015.2457441

M3 - Article

AN - SCOPUS:85027953441

SN - 0018-9383

VL - 62

SP - 2924

EP - 2927

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 7173013

ER -

Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this