Ga 2 O 3 -based p-i-n solar blind deep ultraviolet photodetectors

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Abstract

This study applied a vapor cooling condensation system for depositing p-ZnO:LiNO 3 , i-Ga 2 O 3 , and n-Ga 2 O 3 :Si layers on sapphire substrates to fabricate solar-blind p-i-n deep-ultraviolet photodetectors (DUV-PDs). The deposited i-Ga 2 O 3 absorption layer was measured to exhibit high performance levels. Therefore, when the resulting solar-blind p-i-n DUV-PDs were operated at a reverse bias voltage of − 5 V, the dark current and the DUV (250 nm)/visible (500 nm) rejection ratio were 1.45 pA and 2.5 × 10 4 , respectively. Moreover, when the solar-blind p-i-n DUV-PDs were operated at a reverse bias voltage of − 5 V, the photoresponsivity, noise power density, noise equivalent power, and specific detectivity were 0.73 A/W, 2.45 × 10 −26  A 2 /Hz, 4.80 × 10 −13  W, and 1.97 × 10 12  cmHz 0.5 W −1 , respectively. Furthermore, flicker noise was the dominant low-frequency noise source in the photodetectors. These results demonstrated the effectiveness of the proposed solar-blind p-i-n DUV-PDs.

Original languageEnglish
JournalJournal of Materials Science: Materials in Electronics
DOIs
Publication statusPublished - 2019 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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