Ga2 O3/GaN-based metal-semiconductor-metal photodetectors covered with au nanoparticles

Zheng Da Huang, Wen Yin Weng, Shoou-Jinn Chang, Yuan Fu Hua, Chiu Jung Chiu, Tsung Ying Tsai

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


GaN-based metal-semiconductor-metal photodetectors (PDs) with a β- Ga2 O3 layer were fabricated. To increase performance, the Ga2 O 3/GaN-based PDs were covered with Au nanoparticles. The reverse leakage current decreased by more than two orders of magnitude with a 10-V applied bias and a 95-fold increase of the rejection ratio (250/360 nm) was achieved with a 1-V applied bias after the PDs were covered with Au nanoparticles. There was an obvious response at 490 nm because of the surface plasmon resonance in Au nanoparticles. The results indicate that Au nanoparticles can be used to improve the performance of optoelectronic devices.

Original languageEnglish
Article number6576164
Pages (from-to)1809-1811
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number18
Publication statusPublished - 2013 Sep 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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