GaAs bidirectional bistability switch using double triangular barrier structures

Kao Feng Yarn, Yeong Her Wang, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n--δ(p+)-n --p+-n--δ(p+)-n --n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of ∼ 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac.

Original languageEnglish
Pages (from-to)2695-2698
Number of pages4
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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