GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

Wen-Chau Liu; Lih Wen Laih; Jung Hui Tsai; Kong Beng Thei; Cheng Zu Wu; Wen Shiung Lour; Yuan Tzu Ting; Rong Chau Liu

GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

Wen-Chau Liu, Lih Wen Laih, Jung Hui Tsai, Kong Beng Thei, Cheng Zu Wu, Wen Shiung Lour, Yuan Tzu Ting, Rong Chau Liu

Research output: Contribution to conference › Paper › peer-review

Abstract

A GaAs/n⁺-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n⁺-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n⁺-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

Original language	English
Pages	103-106
Number of pages	4
Publication status	Published - 1995 Dec 1
Event	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong Duration: 1995 Nov 6 → 1995 Nov 10

Other

Other	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
City	Hong Kong, Hong Kong
Period	95-11-06 → 95-11-10

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Cite this

@conference{4aea5ba7ceb74c56a278b9cedcf1f20b,

title = "GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)",

abstract = "A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.",

author = "Wen-Chau Liu and Laih, {Lih Wen} and Tsai, {Jung Hui} and Thei, {Kong Beng} and Wu, {Cheng Zu} and Lour, {Wen Shiung} and Ting, {Yuan Tzu} and Liu, {Rong Chau}",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "103--106",

note = "Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 ; Conference date: 06-11-1995 Through 10-11-1995",

}

GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET). / Liu, Wen-Chau; Laih, Lih Wen; Tsai, Jung Hui et al.
1995. 103-106 Paper presented at Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

AU - Liu, Wen-Chau

AU - Laih, Lih Wen

AU - Tsai, Jung Hui

AU - Thei, Kong Beng

AU - Wu, Cheng Zu

AU - Lour, Wen Shiung

AU - Ting, Yuan Tzu

AU - Liu, Rong Chau

PY - 1995/12/1

Y1 - 1995/12/1

N2 - A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

AB - A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029487701&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029487701

SP - 103

EP - 106

T2 - Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95

Y2 - 6 November 1995 through 10 November 1995

ER -

GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

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