GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

Wen-Chau Liu, Lih Wen Laih, Jung Hui Tsai, Kong Beng Thei, Cheng Zu Wu, Wen Shiung Lour, Yuan Tzu Ting, Rong Chau Liu

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

Original languageEnglish
Pages103-106
Number of pages4
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 1995 Nov 61995 Nov 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CityHong Kong, Hong Kong
Period95-11-0695-11-10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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