A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p+) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)