GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

Wei Chou Hsu, Wen Chau Liu, Der Feng Guo, Wen Shiung Lour

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p+) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.

Original languageEnglish
Pages (from-to)1504-1506
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number13
DOIs
Publication statusPublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this