GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

Wei Chou Hsu; Wen Chau Liu; Der Feng Guo; Wen Shiung Lour

doi:10.1063/1.108672

GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

Wei Chou Hsu, Wen Chau Liu, Der Feng Guo, Wen Shiung Lour

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p⁺) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.

Original language	English
Pages (from-to)	1504-1506
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	13
DOIs	https://doi.org/10.1063/1.108672
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.108672

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title = "GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy",

abstract = "A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p+) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.",

author = "Hsu, {Wei Chou} and Liu, {Wen Chau} and Guo, {Der Feng} and Lour, {Wen Shiung}",

year = "1993",

doi = "10.1063/1.108672",

language = "English",

volume = "62",

pages = "1504--1506",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

AU - Hsu, Wei Chou

AU - Liu, Wen Chau

AU - Guo, Der Feng

AU - Lour, Wen Shiung

PY - 1993

Y1 - 1993

N2 - A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p+) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.

AB - A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p+) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.

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M3 - Article

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SN - 0003-6951

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SP - 1504

EP - 1506

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

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