GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy

Wen Chau Liu, Der Feng Guo, Shiuh Ren Yih, Jing Tong Liang, Lih Wen Liah, Gau Ming Lyuu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this letter, a new switching device having a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device operation.

Original languageEnglish
Pages (from-to)2685-2687
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number20
DOIs
Publication statusPublished - 1994 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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