GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO₂

Liquid-phase deposition of SiO₂ (LPD-SiO₂) is used for the deposition of silicon dioxide (∼40 Å) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 μm gate length and 40 μm channel width, thereby providing the advantage of a process temperature lower than 60°C. LPD-SiO₂ quality can be improved significantly by annealing at 400°C in N₂ for 33 min. This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400°C in N₂ for 33 min. A normalized transconductance was obtained in the vicinity of 280 mS/mm. High-quality MOSFET fabrication using LPD-SiO₂ is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.