GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2

Chien Jung Huang, Zhen Song Ya, Jui Hong Horng, Mau Phon Houng, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Liquid-phase deposition of SiO2 (LPD-SiO2) is used for the deposition of silicon dioxide (∼40 Å) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 μm gate length and 40 μm channel width, thereby providing the advantage of a process temperature lower than 60°C. LPD-SiO2 quality can be improved significantly by annealing at 400°C in N2 for 33 min. This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400°C in N2 for 33 min. A normalized transconductance was obtained in the vicinity of 280 mS/mm. High-quality MOSFET fabrication using LPD-SiO2 is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.

Original languageEnglish
Pages (from-to)5561-5562
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number9
DOIs
Publication statusPublished - 2002 Sep

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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