GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2

Chien Jung Huang, Zhen Song Ya, Jui Hong Horng, Mau-phon Houng, Yeong-Her Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Liquid-phase deposition of SiO2 (LPD-SiO2) is used for the deposition of silicon dioxide (∼40 Å) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 μm gate length and 40 μm channel width, thereby providing the advantage of a process temperature lower than 60°C. LPD-SiO2 quality can be improved significantly by annealing at 400°C in N2 for 33 min. This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400°C in N2 for 33 min. A normalized transconductance was obtained in the vicinity of 280 mS/mm. High-quality MOSFET fabrication using LPD-SiO2 is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.

Original languageEnglish
Pages (from-to)5561-5562
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number9
Publication statusPublished - 2002 Sep 1

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MOSFET devices
metal oxide semiconductors
liquid phases
field effect transistors
Liquids
Fabrication
fabrication
Temperature
Annealing
annealing
Ohmic contacts
Transconductance
transconductance
Alloying
alloying
electric contacts
Silica
silicon dioxide
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2",
abstract = "Liquid-phase deposition of SiO2 (LPD-SiO2) is used for the deposition of silicon dioxide (∼40 {\AA}) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 μm gate length and 40 μm channel width, thereby providing the advantage of a process temperature lower than 60°C. LPD-SiO2 quality can be improved significantly by annealing at 400°C in N2 for 33 min. This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400°C in N2 for 33 min. A normalized transconductance was obtained in the vicinity of 280 mS/mm. High-quality MOSFET fabrication using LPD-SiO2 is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.",
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AU - Huang, Chien Jung

AU - Ya, Zhen Song

AU - Horng, Jui Hong

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

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