GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Ching Ting Lee, Kuo Chuan Shyu, Iang Jeng Lin, Hao Hsiung Lin

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.

Original languageEnglish
Pages (from-to)147-150
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume74
Issue number1
DOIs
Publication statusPublished - 2000 May 1
Event3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey
Duration: 1999 Sep 151999 Sep 17

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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