GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Ching Ting Lee; Kuo Chuan Shyu; Iang Jeng Lin; Hao Hsiung Lin

doi:10.1016/S0921-5107(99)00551-6

GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Ching Ting Lee
, Kuo Chuan Shyu
, Iang Jeng Lin
, Hao Hsiung Lin

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.

Original language	English
Pages (from-to)	147-150
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	74
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(99)00551-6
Publication status	Published - 2000 May 1
Event	3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey Duration: 1999 Sept 15 → 1999 Sept 17

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(99)00551-6

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title = "GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer",

abstract = "A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.",

author = "Lee, \{Ching Ting\} and Shyu, \{Kuo Chuan\} and Lin, \{Iang Jeng\} and Lin, \{Hao Hsiung\}",

note = "Funding Information: The authors wish to acknowledge the National Science Council of the Republic of China for financial support under grant NSC 89-2215-E008-030.; 3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) ; Conference date: 15-09-1999 Through 17-09-1999",

year = "2000",

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doi = "10.1016/S0921-5107(99)00551-6",

language = "English",

volume = "74",

pages = "147--150",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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publisher = "Elsevier Limited",

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TY - JOUR

T1 - GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

AU - Lee, Ching Ting

AU - Shyu, Kuo Chuan

AU - Lin, Iang Jeng

AU - Lin, Hao Hsiung

N1 - Funding Information: The authors wish to acknowledge the National Science Council of the Republic of China for financial support under grant NSC 89-2215-E008-030.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.

AB - A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.

UR - https://www.scopus.com/pages/publications/0033730097

UR - https://www.scopus.com/pages/publications/0033730097#tab=citedBy

U2 - 10.1016/S0921-5107(99)00551-6

DO - 10.1016/S0921-5107(99)00551-6

M3 - Conference article

AN - SCOPUS:0033730097

SN - 0921-5107

VL - 74

SP - 147

EP - 150

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

T2 - 3rd International Conference on Low Dimensional Structures and Devices (LDSD'99)

Y2 - 15 September 1999 through 17 September 1999

ER -

GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Abstract

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