GaAs MOS capacitors with photo-CVD SiO2 insulator layers

C. H. Liu, T. K. Lin, Shoou-Jinn Chang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

SiO2 films were successfully deposited onto n-GaAs substrates by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. With a 1 MV/cm applied electric field, it was found that the SiO2 films leakage current densities were 1.74 × 10-6 and 1.97 × 10-7 A/cm2, respectively, for the capacitors with as-deposited and 400 °C annealed insulator layers. The interface state densities, Dit, were also found to be small for the fabricated Al/photo-CVD-SiO2/GaAs metal-oxide-semiconductor field effect transistors (MOSFETs) capacitors.

Original languageEnglish
Pages (from-to)1077-1080
Number of pages4
JournalSolid-State Electronics
Volume49
Issue number7
DOIs
Publication statusPublished - 2005 Jul 1

Fingerprint

MOS capacitors
Chemical vapor deposition
capacitors
Capacitors
insulators
vapor deposition
Interface states
Deuterium
MOSFET devices
Electric lamps
metal oxide semiconductors
Leakage currents
luminaires
deuterium
leakage
Current density
field effect transistors
Electric fields
current density
electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Liu, C. H. ; Lin, T. K. ; Chang, Shoou-Jinn. / GaAs MOS capacitors with photo-CVD SiO2 insulator layers. In: Solid-State Electronics. 2005 ; Vol. 49, No. 7. pp. 1077-1080.
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GaAs MOS capacitors with photo-CVD SiO2 insulator layers. / Liu, C. H.; Lin, T. K.; Chang, Shoou-Jinn.

In: Solid-State Electronics, Vol. 49, No. 7, 01.07.2005, p. 1077-1080.

Research output: Contribution to journalArticle

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T1 - GaAs MOS capacitors with photo-CVD SiO2 insulator layers

AU - Liu, C. H.

AU - Lin, T. K.

AU - Chang, Shoou-Jinn

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AB - SiO2 films were successfully deposited onto n-GaAs substrates by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. With a 1 MV/cm applied electric field, it was found that the SiO2 films leakage current densities were 1.74 × 10-6 and 1.97 × 10-7 A/cm2, respectively, for the capacitors with as-deposited and 400 °C annealed insulator layers. The interface state densities, Dit, were also found to be small for the fabricated Al/photo-CVD-SiO2/GaAs metal-oxide-semiconductor field effect transistors (MOSFETs) capacitors.

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