GaAs MOS capacitors with photo-CVD SiO2 insulator layers

C. H. Liu, T. K. Lin, S. J. Chang

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

SiO2 films were successfully deposited onto n-GaAs substrates by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. With a 1 MV/cm applied electric field, it was found that the SiO2 films leakage current densities were 1.74 × 10-6 and 1.97 × 10-7 A/cm2, respectively, for the capacitors with as-deposited and 400 °C annealed insulator layers. The interface state densities, Dit, were also found to be small for the fabricated Al/photo-CVD-SiO2/GaAs metal-oxide-semiconductor field effect transistors (MOSFETs) capacitors.

Original languageEnglish
Pages (from-to)1077-1080
Number of pages4
JournalSolid-State Electronics
Volume49
Issue number7
DOIs
Publication statusPublished - 2005 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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