GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Jau Yi Wu; Hwei Heng Wang; Yeong Her Wang; Mau Phon Houng

doi:10.1109/16.915668

GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Jau Yi Wu, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f _T of 1.8 GHz and f _max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

Original language	English
Pages (from-to)	634-637
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	4
DOIs	https://doi.org/10.1109/16.915668
Publication status	Published - 2001 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.915668

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title = "GaAs MOSFET's fabrication with a selective liquid phase oxidized gate",

abstract = "The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.",

author = "Wu, {Jau Yi} and Wang, {Hwei Heng} and Wang, {Yeong Her} and Houng, {Mau Phon}",

note = "Funding Information: Manuscript received December 28, 1999; revised September 27, 2000. This work was supported in part by the National Science Council under the contract number: NSC 89-2215-E-006-006 and the foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan, R.O.C. The review of this paper was arranged by Editor M. F. Chang.",

year = "2001",

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doi = "10.1109/16.915668",

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volume = "48",

pages = "634--637",

journal = "IEEE Transactions on Electron Devices",

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T1 - GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

AU - Wu, Jau Yi

AU - Wang, Hwei Heng

AU - Wang, Yeong Her

AU - Houng, Mau Phon

N1 - Funding Information: Manuscript received December 28, 1999; revised September 27, 2000. This work was supported in part by the National Science Council under the contract number: NSC 89-2215-E-006-006 and the foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan, R.O.C. The review of this paper was arranged by Editor M. F. Chang.

PY - 2001/4

Y1 - 2001/4

N2 - The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

AB - The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

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