The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.
|Number of pages||4|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2001 Apr|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering