GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Jau Yi Wu; Hwei Heng Wang; Yeong Her Wang; Mau Phon Houng

doi:10.1109/16.915668

GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Jau Yi Wu, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f _T of 1.8 GHz and f _max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

Original language	English
Pages (from-to)	634-637
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	4
DOIs	https://doi.org/10.1109/16.915668
Publication status	Published - 2001 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.915668

Cite this

@article{e0f824a13abd465090857bc1bb12b0e4,

title = "GaAs MOSFET's fabrication with a selective liquid phase oxidized gate",

abstract = "The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.",

author = "Wu, {Jau Yi} and Wang, {Hwei Heng} and Wang, {Yeong Her} and Houng, {Mau Phon}",

note = "Funding Information: Manuscript received December 28, 1999; revised September 27, 2000. This work was supported in part by the National Science Council under the contract number: NSC 89-2215-E-006-006 and the foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan, R.O.C. The review of this paper was arranged by Editor M. F. Chang.",

year = "2001",

month = apr,

doi = "10.1109/16.915668",

language = "English",

volume = "48",

pages = "634--637",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

AU - Wu, Jau Yi

AU - Wang, Hwei Heng

AU - Wang, Yeong Her

AU - Houng, Mau Phon

N1 - Funding Information: Manuscript received December 28, 1999; revised September 27, 2000. This work was supported in part by the National Science Council under the contract number: NSC 89-2215-E-006-006 and the foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan, R.O.C. The review of this paper was arranged by Editor M. F. Chang.

PY - 2001/4

Y1 - 2001/4

N2 - The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

AB - The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=0035307761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035307761&partnerID=8YFLogxK

U2 - 10.1109/16.915668

DO - 10.1109/16.915668

M3 - Article

AN - SCOPUS:0035307761

SN - 0018-9383

VL - 48

SP - 634

EP - 637

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this