GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Jau Yi Wu, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enhanced selective gate oxide grown at low temperature are demonstrated. The proposed selective oxidation method makes the fabrication process of GaAs MOSFETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-off and saturation characteristics. The 2 μm gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm and the maximum drain current density of 380 mA/mm. In addition, the microwave characteristics with f T of 1.8 GHz and f max of 5.2 GHz have been achieved from the 3 μm × 60 μm GaAs MOSFETs.

Original languageEnglish
Pages (from-to)634-637
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 2001 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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