A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.
|Number of pages||2|
|Journal||IEE Proceedings I: Solid State and Electron Devices|
|Publication status||Published - 1986 Jan 1|
All Science Journal Classification (ASJC) codes