GaAs n + i delta p + in + BARRIER TRANSISTOR WITH ULTRA-THIN p + AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

W. C. Liu; Y. H. Wang; C. Y. Chang; S. A. Liao

doi:10.1049/ip-i-1.1986.0010

GaAs n⁺ i delta p⁺ in⁺ BARRIER TRANSISTOR WITH ULTRA-THIN p⁺ AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

W. C. Liu, Y. H. Wang, C. Y. Chang, S. A. Liao

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

Original language	English
Pages (from-to)	47-48
Number of pages	2
Journal	IEE Proceedings I: Solid State and Electron Devices
Volume	133
Issue number	2
DOIs	https://doi.org/10.1049/ip-i-1.1986.0010
Publication status	Published - 1986

All Science Journal Classification (ASJC) codes

General Engineering

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abstract = "A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.",

author = "Liu, {W. C.} and Wang, {Y. H.} and Chang, {C. Y.} and Liao, {S. A.}",

year = "1986",

doi = "10.1049/ip-i-1.1986.0010",

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T1 - GaAs n + i delta p + in + BARRIER TRANSISTOR WITH ULTRA-THIN p + AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

AU - Liu, W. C.

AU - Wang, Y. H.

AU - Chang, C. Y.

AU - Liao, S. A.

PY - 1986

Y1 - 1986

N2 - A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

AB - A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

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SP - 47

EP - 48

JO - IEE Proceedings I: Solid State and Electron Devices

JF - IEE Proceedings I: Solid State and Electron Devices

IS - 2

ER -

GaAs n⁺ i delta p⁺ in⁺ BARRIER TRANSISTOR WITH ULTRA-THIN p⁺ AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

Abstract

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