GaAs tri-step high-low doping channel field effect transistor

Wen-Chau Liu, Jung Hui Tsai, Li-Wen, Kong Beng Thei, Chang Zn Wu, Wen Shung Lour, Yuan-Tzu, Rong Chau Liu

Research output: Contribution to conferencePaperpeer-review

Abstract

A fabricated camel-gate FET with a tri-step doping channel exhibits a larger drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5V. A 1.5×100 μm2 gate dimension device was found to have a fT of about 30 GHz with very low input capacitance.

Original languageEnglish
Pages107-110
Number of pages4
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 1995 Nov 61995 Nov 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CityHong Kong, Hong Kong
Period95-11-0695-11-10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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