We report on GaAs quantum well vertical-cavity surface emitting lasers fabricated using low damage reactive ion etching. Lasers which are partially and completely etched through their structure are compared. The surface recombination velocity of exposed GaAs is not exacerbated in deep etched lasers; other loss mechanisms in shallow etched lasers have comparable impact on laser performance. Etched lasers exhibit low voltage and small differential series resistance at threshold, while devices fabricated by a combination of etching and ion implantation possess lower threshold current. We find reactive ion etching has little additional effect on laser operation, whereas the different device structures considered do influence laser performance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering