Abstract
Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.
| Original language | English |
|---|---|
| Pages (from-to) | 456-458 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 2 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1990 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
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GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes. / Wang, Yeong-Her; Tai, K.; Wynn, J. D.; Hong, M.; Fischer, R. J.; Mannaerts, J. P.; Cho, A. Y.
In: IEEE Photonics Technology Letters, Vol. 2, No. 7, 01.01.1990, p. 456-458.Research output: Contribution to journal › Article
TY - JOUR
T1 - GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes
AU - Wang, Yeong-Her
AU - Tai, K.
AU - Wynn, J. D.
AU - Hong, M.
AU - Fischer, R. J.
AU - Mannaerts, J. P.
AU - Cho, A. Y.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.
AB - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.
UR - http://www.scopus.com/inward/record.url?scp=0025460797&partnerID=8YFLogxK
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U2 - 10.1109/68.56622
DO - 10.1109/68.56622
M3 - Article
VL - 2
SP - 456
EP - 458
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 7
ER -