GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

Y. H. Wang; K. Tai; J. D. Wynn; M. Hong; R. J. Fischer; J. P. Mannaerts; A. Y. Cho

doi:10.1109/68.56622

GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

Y. H. Wang, K. Tai, J. D. Wynn, M. Hong, R. J. Fischer, J. P. Mannaerts, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

Original language	English
Pages (from-to)	456-458
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	2
Issue number	7
DOIs	https://doi.org/10.1109/68.56622
Publication status	Published - 1990 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.56622

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title = "GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes",

abstract = "Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.",

author = "Wang, {Y. H.} and K. Tai and Wynn, {J. D.} and M. Hong and Fischer, {R. J.} and Mannaerts, {J. P.} and Cho, {A. Y.}",

year = "1990",

month = jul,

doi = "10.1109/68.56622",

language = "English",

volume = "2",

pages = "456--458",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

AU - Wang, Y. H.

AU - Tai, K.

AU - Wynn, J. D.

AU - Hong, M.

AU - Fischer, R. J.

AU - Mannaerts, J. P.

AU - Cho, A. Y.

PY - 1990/7

Y1 - 1990/7

N2 - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

AB - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

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DO - 10.1109/68.56622

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 7

ER -

GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

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