GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

Y. H. Wang, K. Tai, J. D. Wynn, M. Hong, R. J. Fischer, J. P. Mannaerts, A. Y. Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

Original languageEnglish
Pages (from-to)456-458
Number of pages3
JournalIEEE Photonics Technology Letters
Volume2
Issue number7
DOIs
Publication statusPublished - 1990 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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