Abstract
Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.
| Original language | English |
|---|---|
| Pages (from-to) | 456-458 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 2 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1990 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes'. Together they form a unique fingerprint.
Cite this
Wang, Y. H., Tai, K., Wynn, J. D., Hong, M., Fischer, R. J., Mannaerts, J. P., & Cho, A. Y. (1990). GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes. IEEE Photonics Technology Letters, 2(7), 456-458. https://doi.org/10.1109/68.56622