Abstract
Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.
Original language | English |
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Pages (from-to) | 456-458 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 2 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1990 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering