Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering