GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

Yeong-Her Wang, K. Tai, J. D. Wynn, M. Hong, R. J. Fischer, J. P. Mannaerts, A. Y. Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

Original languageEnglish
Pages (from-to)456-458
Number of pages3
JournalIEEE Photonics Technology Letters
Volume2
Issue number7
DOIs
Publication statusPublished - 1990 Jan 1

Fingerprint

Surface emitting lasers
surface emitting lasers
Semiconductor quantum wells
aluminum gallium arsenides
Semiconductor lasers
Heterojunctions
semiconductor lasers
quantum wells
Distributed Bragg reflectors
cavities
Bragg reflectors
threshold currents
Molecular beam epitaxy
Current density
molecular beam epitaxy
current density
slopes
Wavelength
output
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Wang, Yeong-Her ; Tai, K. ; Wynn, J. D. ; Hong, M. ; Fischer, R. J. ; Mannaerts, J. P. ; Cho, A. Y. / GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes. In: IEEE Photonics Technology Letters. 1990 ; Vol. 2, No. 7. pp. 456-458.
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GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes. / Wang, Yeong-Her; Tai, K.; Wynn, J. D.; Hong, M.; Fischer, R. J.; Mannaerts, J. P.; Cho, A. Y.

In: IEEE Photonics Technology Letters, Vol. 2, No. 7, 01.01.1990, p. 456-458.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

AU - Wang, Yeong-Her

AU - Tai, K.

AU - Wynn, J. D.

AU - Hong, M.

AU - Fischer, R. J.

AU - Mannaerts, J. P.

AU - Cho, A. Y.

PY - 1990/1/1

Y1 - 1990/1/1

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AB - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

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