GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

D. K. Sengupta; W. Fang; J. I. Malin; J. Li; T. Horton; A. P. Curtis; K. C. Hsieh; S. L. Chuang; H. Chen; M. Feng; G. E. Stillman; L. Li; H. C. Liu; K. M.S.V. Bandara; S. D. Gunapala; W. I. Wang

doi:10.1063/1.119473

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

D. K. Sengupta, W. Fang, J. I. Malin, J. Li, T. Horton, A. P. Curtis, K. C. Hsieh, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, L. Li, H. C. Liu, K. M.S.V. Bandara, S. D. Gunapala, W. I. Wang

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

Original language	English
Pages (from-to)	78-80
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	1
DOIs	https://doi.org/10.1063/1.119473
Publication status	Published - 1997 Jul 7

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.119473

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@article{87a06abf3724442bbe0472e103b4b5cc,

title = "GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates",

abstract = "In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.",

author = "Sengupta, {D. K.} and W. Fang and Malin, {J. I.} and J. Li and T. Horton and Curtis, {A. P.} and Hsieh, {K. C.} and Chuang, {S. L.} and H. Chen and M. Feng and Stillman, {G. E.} and L. Li and Liu, {H. C.} and Bandara, {K. M.S.V.} and Gunapala, {S. D.} and Wang, {W. I.}",

year = "1997",

month = jul,

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doi = "10.1063/1.119473",

language = "English",

volume = "71",

pages = "78--80",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

AU - Sengupta, D. K.

AU - Fang, W.

AU - Malin, J. I.

AU - Li, J.

AU - Horton, T.

AU - Curtis, A. P.

AU - Hsieh, K. C.

AU - Chuang, S. L.

AU - Chen, H.

AU - Feng, M.

AU - Stillman, G. E.

AU - Li, L.

AU - Liu, H. C.

AU - Bandara, K. M.S.V.

AU - Gunapala, S. D.

AU - Wang, W. I.

PY - 1997/7/7

Y1 - 1997/7/7

N2 - In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

AB - In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

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DO - 10.1063/1.119473

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

Abstract

All Science Journal Classification (ASJC) codes

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