GaAs0.7 Sb0.3 /GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer

You Ru Lin, Yi Feng Lai, Chuan Pu Liu, Hao Hsiung Lin

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2 Citations (Scopus)


We report the optical properties of a composite structure comprising a type-II GaAs0.7 Sb0.3 /GaAs quantum well (QW) and an InAs quantum-dot (QD) layer adjacent to the QW. The low-temperature photoluminescence (PL) of the composite structure with a 5-nm-thick GaAs spacer demonstrates a redshift of 44 meV, as compared with that of GaAs0.7 Sb0.3 /GaAs single QW at low excitation level. The redshift reveals the existence of local potential minimums, induced by the stress exerted by the adjacent QDs, in the type-II QW. At higher temperature, the composite structure shows stronger PL intensity than the GaAs0.7 Sb0.3 QW, indicating the potential of the applications to laser diodes.

Original languageEnglish
Article number111106
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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