GaAs0.7 Sb0.3 /GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer

You Ru Lin; Yi Feng Lai; Chuan Pu Liu; Hao Hsiung Lin

doi:10.1063/1.3100191

GaAs_0.7 Sb_0.3 /GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer

You Ru Lin, Yi Feng Lai, Chuan Pu Liu, Hao Hsiung Lin

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the optical properties of a composite structure comprising a type-II GaAs_0.7 Sb_0.3 /GaAs quantum well (QW) and an InAs quantum-dot (QD) layer adjacent to the QW. The low-temperature photoluminescence (PL) of the composite structure with a 5-nm-thick GaAs spacer demonstrates a redshift of 44 meV, as compared with that of GaAs_0.7 Sb_0.3 /GaAs single QW at low excitation level. The redshift reveals the existence of local potential minimums, induced by the stress exerted by the adjacent QDs, in the type-II QW. At higher temperature, the composite structure shows stronger PL intensity than the GaAs0.7 Sb0.3 QW, indicating the potential of the applications to laser diodes.

Original language	English
Article number	111106
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3100191
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3100191

Cite this

@article{f15daa625b0c46f882b3776b13f7fd56,

title = "GaAs0.7 Sb0.3 /GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer",

abstract = "We report the optical properties of a composite structure comprising a type-II GaAs0.7 Sb0.3 /GaAs quantum well (QW) and an InAs quantum-dot (QD) layer adjacent to the QW. The low-temperature photoluminescence (PL) of the composite structure with a 5-nm-thick GaAs spacer demonstrates a redshift of 44 meV, as compared with that of GaAs0.7 Sb0.3 /GaAs single QW at low excitation level. The redshift reveals the existence of local potential minimums, induced by the stress exerted by the adjacent QDs, in the type-II QW. At higher temperature, the composite structure shows stronger PL intensity than the GaAs0.7 Sb0.3 QW, indicating the potential of the applications to laser diodes.",

author = "Lin, {You Ru} and Lai, {Yi Feng} and Liu, {Chuan Pu} and Lin, {Hao Hsiung}",

note = "Funding Information: This work was supported by the National Science Council of R.O.C. under Contract No. NSC 95-2215-E-002-027.",

year = "2009",

doi = "10.1063/1.3100191",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - GaAs0.7 Sb0.3 /GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer

AU - Lin, You Ru

AU - Lai, Yi Feng

AU - Liu, Chuan Pu

AU - Lin, Hao Hsiung

N1 - Funding Information: This work was supported by the National Science Council of R.O.C. under Contract No. NSC 95-2215-E-002-027.

PY - 2009

Y1 - 2009

N2 - We report the optical properties of a composite structure comprising a type-II GaAs0.7 Sb0.3 /GaAs quantum well (QW) and an InAs quantum-dot (QD) layer adjacent to the QW. The low-temperature photoluminescence (PL) of the composite structure with a 5-nm-thick GaAs spacer demonstrates a redshift of 44 meV, as compared with that of GaAs0.7 Sb0.3 /GaAs single QW at low excitation level. The redshift reveals the existence of local potential minimums, induced by the stress exerted by the adjacent QDs, in the type-II QW. At higher temperature, the composite structure shows stronger PL intensity than the GaAs0.7 Sb0.3 QW, indicating the potential of the applications to laser diodes.

AB - We report the optical properties of a composite structure comprising a type-II GaAs0.7 Sb0.3 /GaAs quantum well (QW) and an InAs quantum-dot (QD) layer adjacent to the QW. The low-temperature photoluminescence (PL) of the composite structure with a 5-nm-thick GaAs spacer demonstrates a redshift of 44 meV, as compared with that of GaAs0.7 Sb0.3 /GaAs single QW at low excitation level. The redshift reveals the existence of local potential minimums, induced by the stress exerted by the adjacent QDs, in the type-II QW. At higher temperature, the composite structure shows stronger PL intensity than the GaAs0.7 Sb0.3 QW, indicating the potential of the applications to laser diodes.

UR - http://www.scopus.com/inward/record.url?scp=63049090052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63049090052&partnerID=8YFLogxK

U2 - 10.1063/1.3100191

DO - 10.1063/1.3100191

M3 - Article

AN - SCOPUS:63049090052

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111106

ER -

GaAs_0.7 Sb_0.3 /GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this