We report the study of unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga0.64In0.36As0.84Sb0.16/InP heterojunction.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)