Abstract
We report the study of unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga0.64In0.36As0.84Sb0.16/InP heterojunction.
Original language | English |
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Pages (from-to) | 6908-6910 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 86 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1999 Dec |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)