GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy

J. R. Chang; Y. K. Su; Y. T. Lu

doi:10.1063/1.371771

GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy

J. R. Chang, Y. K. Su, Y. T. Lu

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the study of unstrained Ga_0.64In_0.36As_0.84Sb_0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga_0.64In_0.36As_0.84Sb_0.16/InP heterojunction.

Original language	English
Pages (from-to)	6908-6910
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	12
DOIs	https://doi.org/10.1063/1.371771
Publication status	Published - 1999 Dec

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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abstract = "We report the study of unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga0.64In0.36As0.84Sb0.16/InP heterojunction.",

author = "Chang, {J. R.} and Su, {Y. K.} and Lu, {Y. T.}",

year = "1999",

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T1 - GaInAsSb/InP heterojunction band offset

T2 - Measurement by absorption spectroscopy

AU - Chang, J. R.

AU - Su, Y. K.

AU - Lu, Y. T.

PY - 1999/12

Y1 - 1999/12

N2 - We report the study of unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga0.64In0.36As0.84Sb0.16/InP heterojunction.

AB - We report the study of unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga0.64In0.36As0.84Sb0.16/InP heterojunction.

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JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -

GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy

Abstract

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