GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy

J. R. Chang; Y. K. Su; Y. T. Lu

doi:10.1063/1.371771

GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy

J. R. Chang, Y. K. Su, Y. T. Lu

Department of Physics

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

We report the study of unstrained Ga_0.64In_0.36As_0.84Sb_0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga_0.64In_0.36As_0.84Sb_0.16/InP heterojunction.

Original language	English
Pages (from-to)	6908-6910
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	12
DOIs	https://doi.org/10.1063/1.371771
Publication status	Published - 1999 Dec

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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Chang, J. R., Su, Y. K., & Lu, Y. T. (1999). GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy. Journal of Applied Physics, 86(12), 6908-6910. https://doi.org/10.1063/1.371771

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AU - Lu, Y. T.

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