GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy

J. R. Chang, Y. K. Su, Y. T. Lu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the study of unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well structures by room-temperature absorption spectroscopy. In the absorption spectra, strong and well-resolved exciton peaks were observed. By comparing these transition energies with a theoretical calculation, we estimated the valence-band offset ratio to be 0.7±0.05 for the Ga0.64In0.36As0.84Sb0.16/InP heterojunction.

Original languageEnglish
Pages (from-to)6908-6910
Number of pages3
JournalJournal of Applied Physics
Volume86
Issue number12
DOIs
Publication statusPublished - 1999 Dec

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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