GaInNAs metal-semiconductor-metal near-infrared photodetectors

Y. K. Su, S. H. Hsu, R. W. Chuang, S. J. Chang, W. C. Chen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Fabrication of metal-semiconductor-metal near-infrared photodetectors with 0.4 μm-thick GaInNAs absorption layer was demonstrated. Better crystal quality and fewer dislocations were obtained from samples with lower nitrogen content based on the results of photoluminescence and high-resolution X-ray diffraction. The absorption edge located at 1.2 μm under 4 V bias was realised owing to the nitrogen incorporation effect, and the responsivity of GaInNAs MSM photodetectors higher than 60 mA/w was also successfully achieved when compared to other conventional InGaAs detectors. The devices, hereby demonstrated believably, should have potential applications in fibre optics communications.

Original languageEnglish
Pages (from-to)128-130
Number of pages3
JournalIEE Proceedings: Optoelectronics
Issue number3
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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