Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate

Jinn Kong Sheu, Shang Ju Tu, Yu Hsiang Yeh, Ming Lun Lee, Wei Chih Lai

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) grown on sapphire with ex situ AlN nucleation layer prepared by radio-frequency sputtering were investigated. GaN-based epitaxial layers grown on the Ar-implanted AlN/sapphire (AIAS) substrates exhibited selective growth and subsequent lateral growth due to the difference of lattice constants between the implanted and implantation-free regions. Consequently, air voids over the implanted regions were formed around the GaN/AlN/sapphire interfaces. We proposed the growth mechanisms of the GaN layer on the AIAS substrates and characterized the LEDs with embedded air voids. With a 20 mA current injection, experimental results indicate that the light output power of LEDs grown on the AIAS substrates was enhanced by 25 compared with those of conventional LEDs. This enhancement can be attributed to the light scattering at the GaN/air void interfaces to increase the light extraction efficiency of the LEDs.

Original languageEnglish
Article number151103
JournalApplied Physics Letters
Volume101
Issue number15
DOIs
Publication statusPublished - 2012 Oct 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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