Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates

R. W. Chuang, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, H. M. Chang

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25 Citations (Scopus)

Abstract

Gallium nitride (GaN) ultraviolet metal-semiconductor-metal photodetectors (PDs) grown on Si substrates were demonstrated. The dark current of PDs fabricated on Si substrates was substantially smaller in magnitude compared to identical devices prepared on sapphire substrates. With an incident wavelength of 359 nm, the maximum responsivities of the n- -GaN MSM photodetectors with TiW and NiAu contact electrodes were 0.187 and 0.0792 AW, corresponding to quantum efficiencies of 64.7% and 27.4%, respectively. For a given bandwidth of 1 kHz and a given bias of 5 V, the corresponding noise equivalent powers of our n- -GaN MSM photodetectors with TiW and NiAu electrodes were 1.525× 10-12 and 5.119× 10-12 W, respectively. Consequently, the values of detectivity (D*) determined for devices with TiW and NiAu electrodes were then calculated to be 1.313× 1012 and 3.914× 1011 cm Hz0.5 W-1, respectively.

Original languageEnglish
Article number073110
JournalJournal of Applied Physics
Volume102
Issue number7
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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