Gallium nitride photoconductive ultraviolet sensor with a sputtered transparent indium-tin-oxide ohmic contact

J. D. Hwang, C. C. Lin

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A gallium nitride (GaN) photoconductive ultraviolet sensor with a sputtered transparent indium-tin-oxide (ITO) contact is presented, in which a maximum photo-responsivity of 327 A/W at a bias of 5 V and a wavelength of 366 nm is achieved and attributed to good ohmic contact between ITO and n-type GaN layer. It is shown that as-deposited and annealed ITO films deposited onto n-type GaN using a radio frequency sputtering produce linear current-voltage curves that are believed to be the origin of the high photo-responsivity. In addition, annealing is shown to improve transmittance through the ITO films.

Original languageEnglish
Pages (from-to)276-279
Number of pages4
JournalThin Solid Films
Volume491
Issue number1-2
DOIs
Publication statusPublished - 2005 Nov 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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