GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals

Yan Kuin Su, Yu Zung Chiou, Fuh Shyang Juang, Shoou Jin Chang, Jinn Kung Sheu

Research output: Contribution to journalArticlepeer-review

83 Citations (Scopus)

Abstract

The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current-voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they were also better than Au/p-GaN and Ti/n-In0.2Ga0.8N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.

Original languageEnglish
Pages (from-to)2996-2999
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 B
DOIs
Publication statusPublished - 2001 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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