GaN-based cyan light-emitting diode with up to 1-GHz bandwidth for high-speed transmission over SI-POF

Juri Vinogradov, Roman Kruglov, Rainer Engelbrecht, Olaf Ziemann, Jinn-Kong Sheu, Kai Lun Chi, Jhih Min Wun, Jin Wei Shi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire substrate for use as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. By significantly reducing the number of active InxGa1-xN/GaN multiple quantum wells and the thickness of the barrier layers down to 5 nm, such a device with an active diameter of 47 μm demonstrates a record high 3-dB electrical-To-optical bandwidth, as high as 1 and 0.7 GHz, among all the reported highspeed visible LEDs under room temperature and 110 °C operation, respectively. TO-Can packaging with a lens is used to enhance the POF coupling efficiency. Very-high data rates of 5.5 and 5.8 Gbit/s are achieved over step index POF under nonreturn-To-zero and 4-pulse amplitude modulation, respectively. When the POF transmission distance reaches 50 m, there is degradation in the maximum data rate for both modulation schemes to 1.3 Gbit/s due to the dispersion and attenuation of the POF

Original languageEnglish
Article number7201707
JournalIEEE Photonics Journal
Volume9
Issue number3
DOIs
Publication statusPublished - 2017 Jan 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Vinogradov, J., Kruglov, R., Engelbrecht, R., Ziemann, O., Sheu, J-K., Chi, K. L., Wun, J. M., & Shi, J. W. (2017). GaN-based cyan light-emitting diode with up to 1-GHz bandwidth for high-speed transmission over SI-POF. IEEE Photonics Journal, 9(3), [7201707]. https://doi.org/10.1109/JPHOT.2017.2693207