GaN-based cyan light-emitting diode with up to 1-GHz bandwidth for high-speed transmission over SI-POF

Juri Vinogradov, Roman Kruglov, Rainer Engelbrecht, Olaf Ziemann, Jinn Kong Sheu, Kai Lun Chi, Jhih Min Wun, Jin Wei Shi

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire substrate for use as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. By significantly reducing the number of active InxGa1-xN/GaN multiple quantum wells and the thickness of the barrier layers down to 5 nm, such a device with an active diameter of 47 μm demonstrates a record high 3-dB electrical-To-optical bandwidth, as high as 1 and 0.7 GHz, among all the reported highspeed visible LEDs under room temperature and 110 °C operation, respectively. TO-Can packaging with a lens is used to enhance the POF coupling efficiency. Very-high data rates of 5.5 and 5.8 Gbit/s are achieved over step index POF under nonreturn-To-zero and 4-pulse amplitude modulation, respectively. When the POF transmission distance reaches 50 m, there is degradation in the maximum data rate for both modulation schemes to 1.3

Original languageEnglish
Article number7201707
JournalIEEE Photonics Journal
Volume9
Issue number3
DOIs
Publication statusPublished - 2017

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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