GaN-based dual color LEDs with P-type insertion layer for balancing two-color intensities

Kai Lun Chi, Shu Ting Yeh, Yu Hsiang Yeh, Kun Yan Lin, Jin Wei Shi, Yuh Renn Wu, Jinn-Kong Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By inserting p-type layers into active regions of dual-color GaN LEDs to uniform carrier distribution, the output intensities from quantum-wells near n- and p-sides can be balanced under a low driving-current density (< 45 A/cm2).

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
Publication statusPublished - 2013 Jan 1
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period13-06-0913-06-14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Chi, K. L., Yeh, S. T., Yeh, Y. H., Lin, K. Y., Shi, J. W., Wu, Y. R., & Sheu, J-K. (2013). GaN-based dual color LEDs with P-type insertion layer for balancing two-color intensities. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833057] (2013 Conference on Lasers and Electro-Optics, CLEO 2013). IEEE Computer Society.