GaN-based dual-color LEDs with p-type insertion layer for controlling the ratio of two-color intensities

Kai Lun Chi, Shu Ting Yeh, Yu Hsiang Yeh, Kun Yan Lin, Jin Wei Shi, Yuh Renn Wu, Ming Lun Lee, Jinn Kong Sheu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, a novel GaN-based dual-color LED for phosphor-free white-light generation has been demonstrated. By inserting p-type layers with different p-type doping density and thickness into active regions of dual-color GaN LEDs, we can control the ratio of output light intensities from quantum-wells near n- and p-sides. With an optimum sheet charge density of such insertion layer, the intensities of these two colors can be balanced under a much lower driving-current density (45 versus 450 A/cm2) compared with that of reference device without such insertion layer. A 2-D finite-element Poisson and drift-diffusion self-consistent solver including the indium fluctuation is used to design and simulate the device performances. The experimental and simulation results match very well.

Original languageEnglish
Article number6565358
Pages (from-to)2821-2826
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number9
DOIs
Publication statusPublished - 2013 Jul 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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