GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Wei Chih Lai, Cheng Hsiung Yen, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

Original languageEnglish
Article number102101
JournalApplied Physics Express
Volume6
Issue number10
DOIs
Publication statusPublished - 2013 Oct

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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