We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)